型号:

IRLHS6342TRPBF

RoHS:无铅 / 符合
制造商:International Rectifier描述:MOSFET N-CH 30V 8.7A PQFN
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
IRLHS6342TRPBF PDF
标准包装 4,000
系列 HEXFET®
FET 型 MOSFET N 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 30V
电流 - 连续漏极(Id) @ 25° C 8.7A
开态Rds(最大)@ Id, Vgs @ 25° C 15.5 毫欧 @ 8.5A,4.5V
Id 时的 Vgs(th)(最大) 1.1V @ 10µA
闸电荷(Qg) @ Vgs 11nC @ 4.5V
输入电容 (Ciss) @ Vds 1019pF @ 25V
功率 - 最大 2.1W
安装类型 表面贴装
封装/外壳 6-PowerVDFN
供应商设备封装 6-PQFN(2x2)
包装 带卷 (TR)
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